DocumentCode :
317130
Title :
Novel dynamic bias control of electroabsorption waveguide modulator
Author :
Li, G.L. ; Welstand, R.B. ; Chen, W.X. ; Zhu, J.T. ; Pappert, S. ; Sun, C.K. ; Liu, Y.Z. ; Yu, P.K.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Volume :
1
fYear :
1997
fDate :
10-13 Nov 1997
Firstpage :
140
Abstract :
By finding the bias voltage V one can track the optimum bias, VRF-max, for maximum RF efficiency. This concept suggests a new approach to dynamically control the modulator bias for maintaining maximum RF link gain under changing operation conditions. In this work we show that V dynamically tracks VRFmax and thus can be used for controlling the modulator bias voltage for maximum RF efficiency. InGaAsP-InP Franz-Keldysh effect waveguide modulators are used in the measurements
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; optical waveguides; InGaAsP-InP; InGaAsP-lnP Franz-Keldysh effect waveguide modulators; VRF-max; bias voltage; changing operation conditions; dynamic bias control; dynamically control; dynamically tracks; electroabsorption waveguide modulator; maximum RF efficiency; maximum RF link gain; modulator bias; modulator bias voltage; optimum bias; Gain measurement; Optical modulation; Optical polarization; Optical waveguides; Photonic band gap; Radio frequency; Tellurium; Temperature; Virtual manufacturing; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-3895-2
Type :
conf
DOI :
10.1109/LEOS.1997.630558
Filename :
630558
Link To Document :
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