DocumentCode
3171304
Title
Emitter geometry scaling of RF noise in SiGe HBTs
Author
Xia, K. ; Niu, G. ; Sheridan, D. ; Sweeney, S.
Author_Institution
Dept. of Electr. & Comput. Eng., Auburn Univ., AL
fYear
2006
fDate
18-20 Jan. 2006
Abstract
This paper investigates the emitter geometry scaling of RF noise in SiGe HBTs based on noise measurements. The extracted intrinsic noise using noise de-embedding method is found to scale ideally with emitter area and is the major noise source. Non ideal scaling of noise parameters is found to be mainly from the non ideal scaling of base resistance. A recently proposed semi-empirical noise model is examined for its scaling ability
Keywords
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; RF noise; device modeling; emitter geometry scaling; heterojunction bipolar transistor; noise de-embedding method; noise measurements; Circuit noise; Data mining; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit noise; Noise measurement; Radio frequency; Silicon germanium; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location
San Diego, CA
Print_ISBN
0-7803-9472-0
Type
conf
DOI
10.1109/SMIC.2005.1587889
Filename
1587889
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