Title :
Emitter geometry scaling of RF noise in SiGe HBTs
Author :
Xia, K. ; Niu, G. ; Sheridan, D. ; Sweeney, S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., AL
Abstract :
This paper investigates the emitter geometry scaling of RF noise in SiGe HBTs based on noise measurements. The extracted intrinsic noise using noise de-embedding method is found to scale ideally with emitter area and is the major noise source. Non ideal scaling of noise parameters is found to be mainly from the non ideal scaling of base resistance. A recently proposed semi-empirical noise model is examined for its scaling ability
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; RF noise; device modeling; emitter geometry scaling; heterojunction bipolar transistor; noise de-embedding method; noise measurements; Circuit noise; Data mining; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit noise; Noise measurement; Radio frequency; Silicon germanium; Thermal resistance;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587889
