DocumentCode
317135
Title
Room-temperature low-threshold type-II quantum-well lasers at 4.5 μm
Author
Yan, Chi ; Gianardi, D.M., Jr. ; McDaniel, D.L., Jr. ; Falcon, M. ; Lin, Chih-Hsiang ; Murry, S.J. ; Yang, Rui Q. ; Pei, S.S.
Author_Institution
Boeing Defence & Space Group, Kirtland AFB, NM, USA
Volume
1
fYear
1997
fDate
10-13 Nov 1997
Firstpage
156
Abstract
The present data confirm theoretical predictions that semiconductor lasers based on type II InAs-InGaSb-InAs-AlSb QWs should have significant advantages over other structures in the MIR spectral region, due to both improved carrier confinement and the potential of significant Auger suppression
Keywords
Auger effect; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; infrared sources; laser transitions; quantum well lasers; 4.5 mum; InAs-InGaSb-InAs-AlSb; InAs-InGaSb-InAs-AlSb QW lasers; MIR spectral region; improved carrier confinement; low-threshold; quantum-well lasers; room-temperature; significant Auger suppression; type-II; Absorption; Carrier confinement; Electrons; Laser excitation; Laser theory; Power generation; Pump lasers; Quantum well lasers; Semiconductor lasers; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-3895-2
Type
conf
DOI
10.1109/LEOS.1997.630565
Filename
630565
Link To Document