Title :
Room-temperature low-threshold type-II quantum-well lasers at 4.5 μm
Author :
Yan, Chi ; Gianardi, D.M., Jr. ; McDaniel, D.L., Jr. ; Falcon, M. ; Lin, Chih-Hsiang ; Murry, S.J. ; Yang, Rui Q. ; Pei, S.S.
Author_Institution :
Boeing Defence & Space Group, Kirtland AFB, NM, USA
Abstract :
The present data confirm theoretical predictions that semiconductor lasers based on type II InAs-InGaSb-InAs-AlSb QWs should have significant advantages over other structures in the MIR spectral region, due to both improved carrier confinement and the potential of significant Auger suppression
Keywords :
Auger effect; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; infrared sources; laser transitions; quantum well lasers; 4.5 mum; InAs-InGaSb-InAs-AlSb; InAs-InGaSb-InAs-AlSb QW lasers; MIR spectral region; improved carrier confinement; low-threshold; quantum-well lasers; room-temperature; significant Auger suppression; type-II; Absorption; Carrier confinement; Electrons; Laser excitation; Laser theory; Power generation; Pump lasers; Quantum well lasers; Semiconductor lasers; Temperature distribution;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630565
