• DocumentCode
    3171387
  • Title

    A novel 3–5 GHz low noise amplifier using an active inductor

  • Author

    Yunxia You ; Wanrong Zhang ; Hongyun Xie ; Pei Shen ; Yiwen Huang ; Lu Huang ; Botao Sun

  • Author_Institution
    Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
  • fYear
    2009
  • fDate
    3-6 Nov. 2009
  • Firstpage
    300
  • Lastpage
    303
  • Abstract
    This paper presents a novel 3-5 GHz SiGe HBT low noise amplifier (LNA) using an active inductor. The use of active inductor instead of passive inductor can greatly reduce the chip area. The active inductor compensates the decrease of gain of the amplifier and improves the gain flatness in the high-frequency band. The simulation results show the LNA has gain (S21) of 24.856 dB with 0.056 dB variation over the 3 GHz to 5 GHz band. The matched input and output reflectance (S11 and S22) are less than -18 dB and -14 dB, respectively. In addition, LNA is unconditionally stable over the entire band.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; inductors; low noise amplifiers; microwave amplifiers; HBT; LNA; SiGe; active inductor; frequency 3 GHz to 5 GHz; gain 24.856 dB; gain flatness; high-frequency band; input reflectance; low noise amplifier; output reflectance; Active inductor; Feedback; HBT; LNA;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Microwave Technology and Computational Electromagnetics, 2009. ICMTCE. International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-84919-140-1
  • Type

    conf

  • DOI
    10.1049/cp.2009.1326
  • Filename
    5521256
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3171387