Title :
A novel 3–5 GHz low noise amplifier using an active inductor
Author :
Yunxia You ; Wanrong Zhang ; Hongyun Xie ; Pei Shen ; Yiwen Huang ; Lu Huang ; Botao Sun
Author_Institution :
Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
Abstract :
This paper presents a novel 3-5 GHz SiGe HBT low noise amplifier (LNA) using an active inductor. The use of active inductor instead of passive inductor can greatly reduce the chip area. The active inductor compensates the decrease of gain of the amplifier and improves the gain flatness in the high-frequency band. The simulation results show the LNA has gain (S21) of 24.856 dB with 0.056 dB variation over the 3 GHz to 5 GHz band. The matched input and output reflectance (S11 and S22) are less than -18 dB and -14 dB, respectively. In addition, LNA is unconditionally stable over the entire band.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; inductors; low noise amplifiers; microwave amplifiers; HBT; LNA; SiGe; active inductor; frequency 3 GHz to 5 GHz; gain 24.856 dB; gain flatness; high-frequency band; input reflectance; low noise amplifier; output reflectance; Active inductor; Feedback; HBT; LNA;
Conference_Titel :
Microwave Technology and Computational Electromagnetics, 2009. ICMTCE. International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-84919-140-1
DOI :
10.1049/cp.2009.1326
