Title :
Phase change memory — opportunities and challenges
Author :
Rajendran, Bipin ; Lung, Hsiang-Lan ; Lam, Chung
Abstract :
This paper reviews the current development status of Phase Change Memory (PCM) and discusses an advanced scaling demonstration of this technology. A prospective view of possible applications for PCM is also presented.
Keywords :
phase change materials; random-access storage; phase change memory; scaling demonstration; Amorphous materials; CMOS technology; Crystallization; Lungs; Nonvolatile memory; Phase change materials; Phase change memory; Random access memory; Semiconductor diodes; Temperature; CMOS memory integrated circuits; Random access memory; amorphous semiconductors; non-volatile memory;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472460
