Title :
Multiple gate MOSFETs: The road to the future
Author :
DasGupta, Amitava
Author_Institution :
Indian Inst. of Sci. Madras, Chennai
Abstract :
The advantages of multiple gate MOSFETs (MuGFETs) are discussed. The interesting concept of operation of a fully depleted single gate SOI MOSFET as a virtual double gate MOSFET is highlighted. Also, the advantages of lower gate leakage current and short-channel effects in MuGFETs are discussed in detail.
Keywords :
CMOS integrated circuits; MOSFET; leakage currents; logic gates; silicon-on-insulator; CMOS; MuGFET; gate leakage current; multiple gate MOSFET; short-channel effects; single gate SOI MOSFET; virtual double gate MOSFET; Dielectrics and electrical insulation; Doping; Electrons; FinFETs; Leakage current; MOSFETs; Roads; Semiconductor films; Silicon on insulator technology; Tunneling; CMOS; FinFET; fully depleted silicon-on-insulator (FDSOI); multiple gate MOSFETs;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472461
