Title :
Active space division switch fabrics using semiconductor optical amplifiers
Author :
Kim, S. ; Gopinath, A.
Author_Institution :
Minnesota Univ., Minneapolis, MN, USA
Abstract :
In this paper, we report theoretical study of this screening in strained InGaAsP based QW grown on (Ill)substrate and its IR gain spectrum under current injection. In a strained epitaxial layer oriented in the [111] direction, assuming that there are no free charges in the strained layer there is a strain-induced piezoelectric field
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared spectra; optical communication equipment; semiconductor lasers; semiconductor quantum wells; semiconductor switches; space division multiplexing; (Ill)substrate; IR gain spectrum; InGaAsP; active space division switch fabrics; current injection; free charges; semiconductor optical amplifiers; strain-induced piezoelectric field; strained InGaAsP based QW; strained epitaxial layer; strained layer; theoretical study; Absorption; Differential equations; Eigenvalues and eigenfunctions; Fabrics; Lattices; Matrix converters; Optical switches; Piezoelectric materials; Semiconductor optical amplifiers; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630586
