Silicon foundry technology for RF products

Author

Racanelli, Marco ; Kempf, Paul

Author_Institution

Jazz Semicond., Newport Beach, CA

fYear

2006

fDate

18-20 Jan. 2006

Abstract

In this paper we review silicon foundry technology for the realization of highly integrated RF and analog products including wireless transceivers, TV tuners, power amplifiers and emerging mm-wave ICs. A 0.18mum platform is presented that includes modular features such as 200GHz SiGe NPNs, 30GHz RF LDMOS, 18GHz VPNP, 5.6fF/mum² MIM capacitors, 6mum thick Al inductor metal and 8-40V extended drain high-voltage CMOS for power management and control. A next generation platform is described that extends these features to 0.13mum applying a cost-effective SiGe NPN integration to result in a 0.13mum SiGe BiCMOS process with equivalent mask-count to more conventional 0.13mum RF CMOS while supporting multiple SiGe transistors with speeds up to 100GHz

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; capacitors; foundries; millimetre wave integrated circuits; power amplifiers; transceivers; 0.13 micron; 0.18 micron; 100 GHz; 18 GHz; 200 GHz; 30 GHz; 6 micron; 8 to 40 V; BiCMOS process; MIM capacitors; RF CMOS; RF LDMOS; RF products; SiGe; TV tuners; millimeter wave integrated circuit; power amplifiers; silicon foundry technology; wireless transceivers; Foundries; Germanium silicon alloys; High power amplifiers; MIM capacitors; Radio frequency; Radiofrequency amplifiers; Silicon germanium; TV; Transceivers; Tuners;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-9472-0

Type

conf

DOI

10.1109/SMIC.2005.1587900

Filename

1587900