DocumentCode :
317155
Title :
110 GHz slow-wave electrodes for velocity-matched distributed MSM photodetectors with integrated bias load
Author :
Pfitzenmaier, H. ; Buttcher, E.H. ; Dröge, E. ; Bimberg, D.
Author_Institution :
Inst. fur Festkorperphys. I, Tech. Univ. Berlin, Germany
Volume :
1
fYear :
1997
fDate :
10-13 Nov 1997
Firstpage :
218
Abstract :
In conclusion, we have demonstrated slow-wave electrodes with input termination for use in InP-based distributed MSM photodetectors. The input termination has been realized by monolithically integrated thin film resistors and capacitors acting as a bias load. The velocity matching obtained is nearly perfect. A large return loss of 15 dB at 110 GHz has been achieved for the bias load
Keywords :
III-V semiconductors; electrodes; indium compounds; metal-semiconductor-metal structures; optical films; optical losses; photodetectors; resistors; thin film capacitors; 110 GHz; 15 dB; GHz slow-wave electrodes; InP-based distributed MSM photodetectors; capacitors; input termination; integrated bias load; large return loss; monolithically integrated thin film resistors; velocity matching; velocity-matched distributed MSM photodetectors; Coplanar waveguides; Electrodes; Frequency; Impedance; MIM capacitors; Optical distortion; Optical mixing; Optical waveguides; Photodetectors; Resistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-3895-2
Type :
conf
DOI :
10.1109/LEOS.1997.630593
Filename :
630593
Link To Document :
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