Title :
Low temperature behavior of strained-Si n-MOSFETs
Author :
Mahato, S.S. ; Mitra, D. ; Maiti, T.K. ; Chakraborty, P. ; Senapati, B. ; Chakravorty, A. ; Sarkar, S.K. ; Maiti, C.K.
Author_Institution :
Indian Inst. of Sci. Kharagpur, Kharagpur
Abstract :
The performance enhancement in strained-Si n-MOSFETs are evaluated as a function of temperature. Mobility modeling at low temperature is reported. SPICE parameters are extracted for strained-Si n-MOSFETs for the first time.
Keywords :
MOSFET; SPICE; elemental semiconductors; low-temperature techniques; silicon; SPICE parameters; Si; low temperature behavior; mobility modeling; strained-Si n-MOSFET; CMOS process; Electron mobility; Germanium silicon alloys; MOSFET circuits; Metallization; Rapid thermal processing; Silicon germanium; Temperature; Transconductance; Voltage; MOSFET; Strained-Si;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472466
