A design methodology for efficiency improvement of CMOS class-E power amplifiers

Author

Wen An Tsou ; Che Sheng Chen ; Chun Kai Wang ; Kuei Ann Wen

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2009

fDate

3-6 Nov. 2009

Firstpage

253

Lastpage

256

Abstract

This paper presents an analysis on efficiency improvement of class-E power amplifiers (PAs) with Microelectromechanical systems (MEMS) inductors. The efficiency can be improved and has been demonstrated by using MEMS inductors. The proposed MEMS technology is validated by a prototype MEMS inductor. Also, the simulation result of MEMS inductors by HFSS have good match with the measured result. The stacked-metal layer inductors implemented in MEMS process are developed for increasing the quality factor. The simulation result of a CMOS class-E PA with MEMS inductors shows that the increased quality factor of inductors by 2 can improve the drain efficiency by 6%. Therefore, we present a design methodology that can improve the efficiency of PAs by optimizing the quality factor of fully integrated inductors.

Keywords

CMOS analogue integrated circuits; Q-factor; UHF power amplifiers; field effect MMIC; inductors; micromechanical devices; CMOS class-E power amplifiers; MEMS; design methodology; drain efficiency; inductors; microelectromechanical systems; quality factor; stacked-metal layer inductors; MEMS inductors; power amplifiers; power efficiency; quality factor;

fLanguage

English

Publisher

iet

Conference_Titel

Microwave Technology and Computational Electromagnetics, 2009. ICMTCE. International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-84919-140-1

Type

conf

DOI

10.1049/cp.2009.1314

Filename

5521268