Charge controlling in nanoscale shielded channel DG-MOSFET: A quantum simulation

Author

Dehdashti, Nima ; Orouji, Ali A. ; Faez, R.

Author_Institution

Semnan Univ., Semnan

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

127

Lastpage

129

Abstract

Nanoscale Shielded channel transistors are investigated by solving the two-dimensional Poisson equation self-consistently with ballistic quantum transport equations for first time. We present self-consistent solutions of ultrathin body device structures to investigate the effect of electrically shielded channel region which impose charge controlling in the channel region on the characteristics of nanoscale DG-MOSFET. The simulation method is based on nonequlibrium Green´s function (NEGF). Starting from a basic structure with a gate length of 10 nm, the effect of gate length variation on the performance of the device has been investigated.

Keywords

MOSFET; Poisson equation; ballistic transport; nanoelectronics; semiconductor device models; size effect; 2D Poisson equation; charge controlling; gate length variation effect; nanoscale shielded channel DG-MOSFET; nonequlibrium Green function; quantum simulation; self-consistently with ballistic quantum transport equations; ultrathin body device; Dielectrics; Doping; Finite difference methods; Green´s function methods; MOSFETs; Nanoscale devices; Poisson equations; Semiconductor films; Silicon; Writing; Charge Controlling; Non-Equilibrium Green’s Function (NEGF); Shielded Channel DGMOSFET; Two-Dimensional Quantum Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472469

Filename

4472469