Title :
Oxide-confined AlGaInP/AlGaAs visible resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy
Author :
Jalonen, M. ; Toivonen, M. ; Köngäs, J. ; Savolainen, P. ; Salokatve, A. ; Pessa, M.
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
Abstract :
Summary form only given. This paper reports the growth, fabrication, and characterization of the first solid source molecular beam epitaxially (SSMBE)-grown visible resonant cavity LED´s. The epitaxial layers were grown by SSMBE on (100) Si-doped GaAs (2-inch) wafers
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; molecular beam epitaxial growth; optical fabrication; optical resonators; semiconductor growth; 2 inch; AlGaInP-AlGaAs; AlGaInP/AlGaAs visible resonant cavity light-emitting diodes; GaAs:Si; Si-doped GaAs; epitaxial layers; fabrication; oxide-confined; solid source molecular beam epitaxially grown; solid source molecular beam epitaxy; visible resonant cavity LED´s; Apertures; Gallium arsenide; Light emitting diodes; MOCVD; Molecular beam epitaxial growth; Optical arrays; Optical device fabrication; Oxidation; Resonance; Solids;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630604
