Title :
InP microcavity LED emitting at 1.55 μm
Author :
Depreter, B. ; Bolondelie, J. ; Moerman, I. ; Baets, R. ; Van Daele, P. ; Demeester, P.
Author_Institution :
Ghent Univ., Belgium
Abstract :
An InP microcavity LED has been successfully grown using MOCVD. The device shows a narrow spectral linewidth, and a high external quantum efficiency that may be improved further after subsequent processing
Keywords :
III-V semiconductors; indium compounds; light emitting diodes; molecular beam epitaxial growth; semiconductor growth; spectral line breadth; 1.55 mum; InP; InP microcavity LED; MOCVD; high external quantum efficiency; narrow spectral linewidth; Bandwidth; Chromatic dispersion; Distributed Bragg reflectors; Indium phosphide; Light emitting diodes; MOCVD; Microcavities; Mirrors; Optical fiber communication; Testing;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630605
