Title :
Comparative study of 1800 V and 2400 V MCT and IGBT
Author :
Zhang, Bo ; Huang, Alex Q. ; You, Budong ; Li, Zhaoji ; Fang, Jian ; Luo, Xiaorong
Author_Institution :
Coll. of Microelectron. & Solid-State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fDate :
29 June-1 July 2002
Abstract :
The carrier lifetime and buffer-layer parameters determine the power dissipations of modern power devices. In this paper, based on simulation results, the trade-off relationships between the on-state conduction loss and turn-off loss of the 1800 V and 2400 V N-MCTs (N-MOS controlled thyristors) and IGBTs are studied comparatively. The simulation shows that the N-MCT has a better performance than that of the IGBT in the area studied.
Keywords :
MOS-controlled thyristors; carrier lifetime; insulated gate bipolar transistors; losses; power bipolar transistors; semiconductor device models; 1800 V; 2400 V; IGBT; N-MCT; buffer-layer parameters; carrier lifetime; high-voltage devices; on-state conduction loss; power dissipation; simulation; turn-off loss; Buffer layers; Charge carrier lifetime; Circuit simulation; Doping profiles; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Semiconductor process modeling; Thyristors; Voltage;
Conference_Titel :
Communications, Circuits and Systems and West Sino Expositions, IEEE 2002 International Conference on
Print_ISBN :
0-7803-7547-5
DOI :
10.1109/ICCCAS.2002.1179113
