Title :
Reliability analysis of thin HfO2/SiO2 gate dielectric stack
Author :
Samanta, Piyas ; Zhu, Chunxiang ; Chan, Mansun
Author_Institution :
Hong Kong Univ. of Sc. & Tech., Kowloon
Abstract :
Electrical characteristics of hafnium oxide (HfO2)/silicon dioxide (SiO2) gate dielectric stack during both constant voltage stress (CVS) and constant current stress (CCS) have been experimentally investigated with varying thickness of the HfO2 layer. The generation kinetics of bulk, interface and border trapped charges have been discussed showing a correlation among them. Nature of intrinsic hole traps in SiO2 has also been studied from an independent charge relaxation experiment. In addition, time-dependent dielectric breakdown (TDDB) has been studied during CVS.
Keywords :
dielectric materials; electric breakdown; hafnium compounds; reliability; silicon compounds; charge relaxation; constant current stress; constant voltage stress; hafnium oxide; intrinsic hole traps; reliability analysis; silicon dioxide; thin gate dielectric stack; time-dependent dielectric breakdown; Breakdown voltage; Carbon capture and storage; Current density; Degradation; Dielectric measurements; Hafnium oxide; Stress; Thickness measurement; Threshold voltage; Tunneling; Charge trapping; HfO2; MOS; TDDB;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472471
