A self-consistent modeling of 4H-SiC Schottky barrier diodes

The present state of SiC power Schottky barrier diode (SBR) is presented in this paper. 4H-SiC SBD is modeled using a self-consistent model. The model is based on the solution of semiconductor transport equations from the surface to the bulk region. The model includes the effect of oxide thickness at the metal semiconductor interface SiO₂/SiC; effective oxide charge at the interfacial layer included the fixed and mobile charges, and the effect of interface state charge density. A very good agreement between the simulated forward characteristics using the present model and published experimental data. The model is used to characterize the barrier height change due to effect of oxide thickness, effective oxide charge, and interface state charge density.