Title :
Efficient non-quasi-static MOSFET model for both time-domain and frequency-domain analysis
Author :
Machida, K. ; Navarro, D. ; Miyake, M. ; Inagaki, R. ; Sadachika, N. ; Ezaki, T. ; Mattausch, H.J. ; Miura-Mattausch, M.
Author_Institution :
Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ.
Abstract :
A consistent non-quasi-static MOSFET model for time-domain and frequency-domain circuit simulation is developed. The model takes into account the time delay for carriers to form the channel, which is neglected in conventional quasi-static models. The model, as implemented into the surface-potential-based MOSFET model HiSIM, is verified to calculate correct Y-parameters in the frequency domain. The computational runtime cost of the model is comparable to a conventional quasi-static modeling approach
Keywords :
MOSFET; frequency-domain analysis; semiconductor device models; time-domain analysis; HiSIM; circuit simulation; frequency-domain analysis; nonquasistatic MOSFET model; surface-potential-based MOSFET model; time delay; time-domain analysis; Circuit simulation; Delay effects; Electronic mail; Equations; Frequency domain analysis; Inverters; MOSFET circuits; Runtime; Semiconductor device modeling; Time domain analysis;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587910
