RF performance of process-induced strain-engineered n-MOSFETs

Author

Maiti, T.K. ; Mahato, S.S. ; Chakraborty, P. ; Sarkar, S.K. ; Maiti, C.K.

Author_Institution

IIT Kharagpur, Kharagpur

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

154

Lastpage

156

Abstract

Results of high frequency performance studies using technology CAD (TCAD) of process-induced strain- engineered n-MOSFETs with channel lengths down to 40 nm is reported. Uniaxial tensile stress induced in the channel using stressed contact liners were found to significantly improve ac performance, predicting a maximum oscillation frequency, f_max as high as 450 GHz. A record high cutoff frequency, f_T of 380 GHz has been obtained in simulation, which, however, needs to be verified experimentally.

Keywords

MOSFET; electronic engineering computing; technology CAD (electronics); RF performance; frequency 380 GHz; frequency 450 GHz; high frequency performance studies; process-induced strain-engineered n-MOSFET; technology CAD; uniaxial tensile stress; Analytical models; Computational modeling; Cutoff frequency; MOSFET circuits; Predictive models; Radio frequency; Scattering; Tensile strain; Tensile stress; Transconductance; Process-induced strain; RF performance; Smith chart; Strain-engineered MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472476

Filename

4472476