Title :
Radiation effects on strain-engineered p-MOSFETs
Author :
Maiti, T.K. ; Mahato, S.S. ; Chakraborty, P. ; Sarkar, S.K. ; Maiti, C.K.
Author_Institution :
IIT Kharagpur, Kharagpur
Abstract :
Effects of heavy ion irradiation on process- induced strained-Si (PSS) p-MOSFETs are studied via simulation. It is shown that for the immediate (short term), irradiation can cause degradation in the transconductance and drain current.
Keywords :
MOSFET; radiation hardening (electronics); drain current; heavy ion irradiation; radiation hardening; strain-engineered p-MOSFET; transconductance; Calibration; Degradation; Germanium silicon alloys; Ionizing radiation; MOSFET circuits; Radiation effects; Radiation hardening; Silicon germanium; Threshold voltage; Transconductance; embeded SiGe S/D; head-on collision; radiation hardening; traps;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472478
