Title :
Modeling of irregular non-planar transition effects formed by bulk micromachining on high resistivity silicon wafer
Author :
Zheng, Chenglin ; Banerjee, S. Riki ; Drayton, Rhonda F.
Author_Institution :
Dept. of Electr. Eng. & Comput. Eng., Minnesota Univ., Minneapolis, MN
Abstract :
An irregular non-planar transition effect, that connects a 50Omega microstrip to a 16Omega partially shielded valley microstrip is studied. The transition effect is modeled using LC T-network and distributed transmission line methods. The circuit model results show agreement with full-wave simulation and measurement data up to approximately 32GHz
Keywords :
elemental semiconductors; micromachining; microstrip lines; microwave integrated circuits; silicon; 16 ohm; 50 ohm; LC T-network; Si; bulk micromachining; distributed transmission line; high resistivity silicon wafer; irregular nonplanar transition effects; partially shielded valley microstrip; Circuit simulation; Conductivity; Feeds; Frequency; Integrated circuit interconnections; MMICs; Micromachining; Microstrip components; Semiconductor device modeling; Silicon;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587914
