Title :
1.3 μm GaInAsP lasers with Bragg reflector consisting of semiconductor and air
Author :
Mukaihara, T. ; Yamanaka, N. ; Iwai, N. ; Nishikata, K. ; Ishikawa, T. ; Kasukawa, A.
Author_Institution :
R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
We report fabrication of 1.3 μm GaInAsP lasers with a semiconductor/air Bragg reflector (SABAR) and investigate its mirror performance. We evaluated the mirror performance based on threshold characteristics of the broad-area lasers. The SABAR fabricated by chemical etching achieves reasonable reflectivity of 50%
Keywords :
III-V semiconductors; current density; etching; gallium arsenide; indium compounds; laser mirrors; laser transitions; optical fabrication; optical losses; quantum well lasers; reflectivity; 1.3 mum; GaInAsP; GaInAsP lasers; broad-area lasers; chemical etching; fabrication; mirror performance; reflectivity; semiconductor/air Bragg reflector; threshold characteristics; Absorption; Chemical lasers; Diffraction; Electrons; Etching; Laser modes; Mirrors; Reflectivity; Semiconductor lasers; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630621
