Title :
Design of a W-band Subharmonically pumped mixer based on a hybrid Schottky diode model
Author :
Yu Wei-hua ; Mou Jin-chao ; Li Xiang ; Lv Xin
Author_Institution :
Lab. of Microwave Commun. & Electron. Syst., Beijing Inst. of Technol., Beijing, China
Abstract :
This paper presents a hybrid Schottky diode model for mixer design. The model consists of two parts: the passive part and the active part. The passive part is built according to the dimensions of the diode which can be analyzed by EM simulator and the active part is built according to the I-V characteristic which can be analyzed by harmonic balanced simulator. Based on the proposed model, a W-band Subharmonically pumped mixer was designed, whose conversion loss is below 14 dB from 85 GHz to 93 GHz.
Keywords :
III-V semiconductors; Schottky diode mixers; gallium arsenide; millimetre wave mixers; semiconductor device models; EM simulator; GaAs; W-band subharmonically pumped mixer; active part; conversion loss; frequency 85 GHz to 93 GHz; harmonic balanced simulator; hybrid Schottky diode model; passive part; GaAs Schottky diode; W-band; hybrid diode model; subharmonically pumped mixer;
Conference_Titel :
Microwave Technology and Computational Electromagnetics, 2009. ICMTCE. International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-84919-140-1
DOI :
10.1049/cp.2009.1301
