Title :
The maximum useful doping concentration of the pinched base of SiGe HBTs: a theory study
Author :
Jiang, Ningyue ; Ma, Zhenqiang
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI
Abstract :
The maximum useful base doping concentration that can be used to improve fmax of SiGe HBTs is investigated. 2D numerical device simulation and analytical results are compared to verify that f max does not always increase with the base doping concentration. Instead, the extrinsic base resistance is found to be the device parameter that greatly influences the dependence of fmax on the base doping concentration. The proper approach to improving fmax of SiGe HBTs is discussed
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor doping; 2D numerical device simulation; SiGe; base doping concentration; extrinsic base resistance; heterojunction bipolar transistors; pinched base; Analytical models; Bismuth; Doping profiles; Drives; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave devices; Radio frequency; Silicon germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587916
