Title :
InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE
Author :
Lammert, R.M. ; Jones, A.M. ; Youtsey, C.T. ; Hughes, J.S. ; Roh, S.D. ; Adesida, I. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
Generally, the fabrication of distributed Bragg reflector (DBR) and distributed feedback (DFB) lasers requires regrowth over a grating. While fabricating these devices, special measures must be taken in order to preserve the grating during the regrowth. Moreover, surface preparation techniques are needed to remove grating fabrication contamination before regrowth. Utilizing surface gratings to fabricate DBR lasers solves the problem of regrowth. In this work, we employ chemically assisted ion beam etching (CAIBE) to form first-order DBR gratings into a 0.74 μm thick upper cladding structure for an InGaAsP-InP ridge-waveguide (RW) DBR QW laser with a first-order grating
Keywords :
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; etching; gallium arsenide; gallium compounds; indium compounds; ion beam applications; optical fabrication; quantum well lasers; ridge waveguides; waveguide lasers; 0.74 mum; CAIBE; InGaAsP-InP; InGaAsP-InP ridge-waveguide DBR QW laser; InGaAsP-InP ridge-waveguide DBR lasers; chemically assisted ion beam etching; distributed Bragg reflector lasers; first-order DBR gratings; first-order surface gratings; grating fabrication contamination; regrowth; surface preparation techniques; upper cladding structure; Bragg gratings; Chemical lasers; Distributed Bragg reflectors; Distributed feedback devices; Ion beams; Laser feedback; Optical device fabrication; Pollution measurement; Surface contamination; Surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630624
