Title :
A 2-D analytical subthreshold model for gate misalignment effects on graded channel DG FD SOI n-MOSFET
Author :
Sharma, Rupendra Kumar ; Saxena, Manoj ; Gupta, Mridula ; Gupta, R.S.
Author_Institution :
Semicond. Devices Res. Lab., New Delhi
Abstract :
We have presented a two dimensional closed form analytical subthreshold model for graded channel (GC) double gate fully depleted SOI n-MOSFET with gate misalignment effect, using conformal mapping transformation approach. A closed-form compact model, considering the gate misalignment effect in the non-gate overlap region has also been developed.
Keywords :
MOSFET; silicon-on-insulator; GC; SOI n-MOSFET; analytical subthreshold model; conformal mapping transformation approach; gate misalignment effects; graded channel; Analytical models; Conformal mapping; Electronic mail; Laboratories; MOSFET circuits; Poisson equations; Semiconductor device modeling; Semiconductor devices; Silicon; Threshold voltage; ATLAS device simulation; Graded channel; Subthreshold model; conformal mapping;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472482
