Title :
Extremely-large p-i(MQW)-n modulator diodes to examine intrinsic device yield
Author :
Goossen, K.W. ; Leibenguth, R.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
Summary form only given. We present data designed to show material defect levels pertinent to p-i-n MQW modulators. We do this by forming extremely-large modulators with 5x5 mm active areas. We then measure the reverse leakage current. Our wafer was grown by MBE on a semi-insulating substrate
Keywords :
VLSI; electro-optical modulation; integrated optoelectronics; leakage currents; molecular beam epitaxial growth; p-i-n photodiodes; semiconductor device testing; semiconductor growth; semiconductor quantum wells; MBE; active areas; extremely-large modulators; extremely-large p-i(MQW)-n modulator diodes; intrinsic device yield; material defect levels; p-i-n MQW modulators; reverse leakage current; semi-insulating substrate; Degradation; Diodes; Laser beams; Leakage current; Microscopy; Optical arrays; Optical materials; Optical modulation; Vertical cavity surface emitting lasers; Very large scale integration;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630626
