Effect of nitridation on Al/HfO2/Ge MIS capacitors

Author

Kailath, Binsu J. ; Bhattacharya, Sekhar ; DasGupta, Amitava ; DasGupta, Nandita ; McNeill, D.W. ; Gamble, H.

Author_Institution

Indian Inst. of Technol. Madras, Chennai

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

194

Lastpage

197

Abstract

MIS capacitors on nitrided and non-nitrided Ge substrates with HfO₂ as the dielectric have been studied. Effective oxide thickness is found to be reduced after nitridation. Significant improvements in the electrical characteristics are observed for the devices fabricated on nitrided substrates. The value of density of interface states is found to be lower for nitrided device when compared to non-nitrided device. Leakage current is drastically reduced for the nitrided device. The Breakdown field strength is improved from 11.3 MV/cm for the non-nitrided device to 15.89 MV/cm for the nitrided device.

Keywords

MIS capacitors; hafnium compounds; nitridation; Al-HfO₂-Ge; Ge; MIS capacitors; electrical characteristics; interface states; leakage current; nitridation; Capacitors; Dielectric devices; Dielectric substrates; Germanium; Hafnium oxide; High-K gate dielectrics; Leakage current; Passivation; Photonic band gap; Surface treatment; Capacitance measurement; Current measurement; Germanium; MIS Devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472483

Filename

4472483