Title :
Effect of nitridation on Al/HfO2/Ge MIS capacitors
Author :
Kailath, Binsu J. ; Bhattacharya, Sekhar ; DasGupta, Amitava ; DasGupta, Nandita ; McNeill, D.W. ; Gamble, H.
Author_Institution :
Indian Inst. of Technol. Madras, Chennai
Abstract :
MIS capacitors on nitrided and non-nitrided Ge substrates with HfO2 as the dielectric have been studied. Effective oxide thickness is found to be reduced after nitridation. Significant improvements in the electrical characteristics are observed for the devices fabricated on nitrided substrates. The value of density of interface states is found to be lower for nitrided device when compared to non-nitrided device. Leakage current is drastically reduced for the nitrided device. The Breakdown field strength is improved from 11.3 MV/cm for the non-nitrided device to 15.89 MV/cm for the nitrided device.
Keywords :
MIS capacitors; hafnium compounds; nitridation; Al-HfO2-Ge; Ge; MIS capacitors; electrical characteristics; interface states; leakage current; nitridation; Capacitors; Dielectric devices; Dielectric substrates; Germanium; Hafnium oxide; High-K gate dielectrics; Leakage current; Passivation; Photonic band gap; Surface treatment; Capacitance measurement; Current measurement; Germanium; MIS Devices;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472483
