Title :
Reliability predictions for strained-Si/SiGe Quantum-well p-MOSFETs
Author :
Mahato, S.S. ; Maiti, T.K. ; Chakraborty, P. ; Sarkar, S.K. ; Maiti, C.K.
Author_Institution :
IIT Kharagpur, Kharagpur
Abstract :
Device simulation has been used to study the performance enhancement prediction for buried SiGe-channel p-MOSFETs. Steady state self-heating is modeled via the inclusion of thermal-flow analog auxiliary sub-circuits.
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; semiconductor device models; semiconductor device reliability; semiconductor materials; semiconductor process modelling; semiconductor quantum wells; silicon; Si-SiGe; metal-oxide-semiconductor field effect transistors; performance enhancement prediction; semiconductor device reliability; steady state self-heating; strained quantum-well p-MOSFET; thermal-flow analog auxiliary subcircuits; CMOS technology; Germanium silicon alloys; MOSFET circuits; Particle scattering; Predictive models; Quantum wells; Rough surfaces; Silicon germanium; Silicon on insulator technology; Surface roughness; Quantum well; SiGe; p-MOSFETs; strained-Si;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472484
