DocumentCode :
3171876
Title :
Research of anisotropic etching in KOH water solution with isopropyl alcohol
Author :
Lv, Yufans ; Ma, Jiazhi ; Zou, Jun ; Wang, Xn
Author_Institution :
Sch. of Electron. Inf. Eng., Tianjin Univ., China
Volume :
2
fYear :
2002
fDate :
29 June-1 July 2002
Firstpage :
1779
Abstract :
Anisotropic etching plays a key role in the whole manufacture process of Microelectromechanical system (MEMS). As a non-poisonous and low-cost etchant, KOH water solution is used extensively in anisotropic etching process. The etching process of silicon wafers in KOH water solution with isopropyl alcohol (IPA) has been studied. IPA proved to be an effective admixture to the solution improves the smoothness of etched silicon surfaces. The etching rate of silicon wafers in the wide range of etching temperature has been estimated. The etching rate increases with the increase of etching temperature. The influence of solution concentration on etching rate has been discussed. Theoretical explanation is offered to expound the phenomenon that there is a peak of etching rate with the change of KOH concentration. An optimum of composition of KOH water solution is offered.
Keywords :
elemental semiconductors; etching; micromechanical devices; silicon; KOH water solution; MEMS manufacture; Si; anisotropic etching; isopropyl alcohol; silicon wafer; surface roughness; Ambient intelligence; Anisotropic magnetoresistance; Circuits; Lungs; Micromechanical devices; Silicon compounds; Solvents; Temperature; Tiles; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications, Circuits and Systems and West Sino Expositions, IEEE 2002 International Conference on
Print_ISBN :
0-7803-7547-5
Type :
conf
DOI :
10.1109/ICCCAS.2002.1179123
Filename :
1179123
Link To Document :
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