Title :
Growth of strained SiGe layers and SiGe/Si multiple quantum well structures using molecular beam epitaxy
Author :
Das, S. ; Singha, R.K. ; Das, K. ; Dhar, A. ; Ray, S.K.
Author_Institution :
Indian Inst. of Technol. Kharagpur, Kharagpur
Abstract :
Pseudomorphic Si1-xGex epitaxial layers have been grown on Si(100) at a low temperature using molecular beam epitaxy. Compressively strained grown layers have been characterized by high-resolution XRD, RBS and Raman spectroscopy. A 5-period SiGe/Si multiple quantum well structure has also been grown for infrared photodetector applications. The simulated and measured temperature dependent dark current behaviour of the multi- quantum well structure is presented.
Keywords :
Ge-Si alloys; Raman spectroscopy; Rutherford backscattering; X-ray diffraction; infrared detectors; photodetectors; semiconductor epitaxial layers; semiconductor materials; semiconductor quantum wells; RBS; Raman spectroscopy; SiGe; compressively strained grown layers; epitaxial layers; high-resolution XRD; infrared photodetector; molecular beam epitaxy; multiple quantum well structures; Current measurement; Epitaxial layers; Germanium silicon alloys; Molecular beam epitaxial growth; Photodetectors; Raman scattering; Silicon germanium; Spectroscopy; Temperature measurement; X-ray scattering; MBE; SiGe; Strain; photodetector;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472487
