Title :
Aluminum induced crystallization of amorphous silicon: Microstructural and crystallographic investigations
Author :
Kishore, R. ; Srivastava, A.K. ; Naseem, H.A. ; Brown, W.D.
Author_Institution :
Nat. Phys. Lab., New Delhi
Abstract :
Several experiments have been performed to evaluate the nucleation, growth, structure and microstructure of aluminum induced catalytically activated low temperature crystallization of amorphous Si. TEM and in-situ XRD investigations on hydrogenated amorphous silicon (alpha-Si:H) grown by PECVD and coated with a thin layer of aluminum on it revealed the beginning of solid state transformation of polycrystalline Si (poly-Si) in the form of heterogeneously evolved nuclei in alpha-Si:H at 140degC and significant nano-scaled dendrites at 150degC.
Keywords :
X-ray diffraction; aluminium; amorphous semiconductors; crystal microstructure; crystallisation; crystallography; dendrites; elemental semiconductors; hydrogen; metallic thin films; nanostructured materials; nucleation; plasma CVD; semiconductor growth; silicon; solid-state phase transformations; transmission electron microscopy; Al-Si:H; PECVD; Si:H; TEM; crystallographic investigation; hydrogenated amorphous silicon; in-situ XRD investigation; low-temperature aluminum induced crystallization; nano-scaled dendrites; silicon growth; solid state transformation; temperature 140 C; temperature 150 C; Aluminum; Amorphous materials; Amorphous silicon; Crystallization; Crystallography; Microstructure; Performance evaluation; Solid state circuits; Temperature; X-ray scattering; Aluminum induced crystallization; Amorphous Si; Electron microscopy;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472488
