Aluminum induced crystallization of amorphous silicon: Microstructural and crystallographic investigations

Author

Kishore, R. ; Srivastava, A.K. ; Naseem, H.A. ; Brown, W.D.

Author_Institution

Nat. Phys. Lab., New Delhi

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

217

Lastpage

220

Abstract

Several experiments have been performed to evaluate the nucleation, growth, structure and microstructure of aluminum induced catalytically activated low temperature crystallization of amorphous Si. TEM and in-situ XRD investigations on hydrogenated amorphous silicon (alpha-Si:H) grown by PECVD and coated with a thin layer of aluminum on it revealed the beginning of solid state transformation of polycrystalline Si (poly-Si) in the form of heterogeneously evolved nuclei in alpha-Si:H at 140degC and significant nano-scaled dendrites at 150degC.

Keywords

X-ray diffraction; aluminium; amorphous semiconductors; crystal microstructure; crystallisation; crystallography; dendrites; elemental semiconductors; hydrogen; metallic thin films; nanostructured materials; nucleation; plasma CVD; semiconductor growth; silicon; solid-state phase transformations; transmission electron microscopy; Al-Si:H; PECVD; Si:H; TEM; crystallographic investigation; hydrogenated amorphous silicon; in-situ XRD investigation; low-temperature aluminum induced crystallization; nano-scaled dendrites; silicon growth; solid state transformation; temperature 140 C; temperature 150 C; Aluminum; Amorphous materials; Amorphous silicon; Crystallization; Crystallography; Microstructure; Performance evaluation; Solid state circuits; Temperature; X-ray scattering; Aluminum induced crystallization; Amorphous Si; Electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472488

Filename

4472488