Title :
Defect-free GaAs/AlAs distributed Bragg reflector mirrors an patterned InP-based heterostructures: application to 1.55 μm VCSELs
Author :
Gebretsadik, H. ; Kamath, K. ; Linder, K. ; Bhattacharya, P. ; Caneau, C. ; Bhat, R.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
We demonstrate here the MBE growth of GaAs-AlAs λ/4 Bragg mirrors (λ=1.55 μm) on patterned InP-based quantum well vertical cavity surface-emitting lasers (VCSEL) heterostructures, with misfit of 3.7%, without the generation of misfit dislocations
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; laser mirrors; laser transitions; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; surface emitting lasers; 1.55 mum; GaAs-AlAs; GaAs-AlAs λ/4 Bragg mirrors; InP; InP-based quantum well vertical cavity surface-emitting lasers; MBE growth; VCSEL heterostructures; VCSELs; defect-free GaAs/AlAs distributed Bragg reflector mirrors; misfit dislocations; patterned InP-based heterostructures; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Gallium arsenide; Lithography; Mirrors; Molecular beam epitaxial growth; Quantum well devices; Vertical cavity surface emitting lasers; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630636
