Title :
Si BJT LNA circuit performance under radiation
Author :
Fairbanks, John S.
Author_Institution :
Center for Wireless Commun., California Univ., San Diego, CA
Abstract :
A Si BJT low noise amplifier (LNA) circuit performance under radiated conditions is presented and discussed. The neutron fluence of 5.0E11 n/cm2 showed shifts in LNA performance. The electron bursts produced dose rate upsets in the LNA at higher levels, requiring a 1 to 2 musecond recovery. High energy photon irradiation produced shifts indicating a radiation tolerant process and design, where this performance was not expected
Keywords :
bipolar transistors; elemental semiconductors; low noise amplifiers; radiation effects; silicon; 1 to 2 mus; BJT LNA circuit performance; BJT low noise amplifier; Si; bipolar junction transistor; electron bursts; high energy photon irradiation; neutron fluence; radiated conditions; radiation tolerant process; Bipolar transistor circuits; Charge carrier lifetime; Circuit noise; Circuit optimization; Degradation; Electrons; Neutrons; Noise figure; Noise measurement; Radio frequency;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587924
