Title :
An integrated 150 Vpp, 12 kV/ mu s class AB CRT-driving amplifier
Author :
Blanke, P.G. ; Verdaasdonk, J.P.M.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
An integrated output amplifier with an output voltage swing of more than 150 V/sub pp/, a slew rate of 12 kV/ mu s, a large-signal bandwidth of 30 MHz, and a small-signal bandwidth exceeding 60 MHz is described. It is intended to drive the cathode of a cathode ray tube (CRT) in a projection television or a high-definition television (HDTV) set. The amplifier comprises a transadmittance stage followed by a feedback transimpedance amplifier. A zero in the feedback transfer allows the open-loop voltage gain of the transimpedance amplifier to have a -12-dB/octave slope at the unity loop-gain frequency. A zero in the transfer of the transadmittance stage results in a larger overall bandwidth than is possible in a conventional voltage-feedback configuration. The high-voltage DMOS technology which is used is based on a 10-mask bipolar process with double-sided p+ isolation and n+ collector diffusions. The 150-V/sub pp/ step response is shown. The rise and fall times are 11 and 12 ns, respectively, yielding slew rates of 13 and 12 kV/ mu s respectively. The overshoot is 12%. The small-signal (10 V/sub pp/) bandwidth, limited by the third pole of the transimpedance amplifier, exceeds 60 MHz. The large-signal (150-V/sub pp/) bandwidth, limited by slew rate, is 30 MHz.<>
Keywords :
MOS integrated circuits; power amplifiers; power integrated circuits; video amplifiers; 12 ns; 150 V; 30 to 60 MHz; 60 MHz; CRT cathode driver; CRT-driving amplifier; HDTV; class AB; double-sided p+ isolation; fall times; feedback transimpedance amplifier; high-definition television; high-voltage DMOS technology; integrated output amplifier; large-signal bandwidth; n+ collector diffusions; open-loop voltage gain; output voltage swing; overshoot; projection television; rise time; slew rate; small-signal bandwidth; step response; transadmittance stage; video power amplifiers; Bandwidth; Epitaxial layers; Feedback; Frequency; Implants; MOS devices; Parasitic capacitance; Radiofrequency amplifiers; Resistors; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1989. Digest of Technical Papers. 36th ISSCC., 1989 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1989.48262