Two-dimensional quantum simulation of scaling effects in ultrathin body MOSFET structure: NEGF approach

For the first time, we present self-consistent solution of ultrathin body device structures to investigate the device parameters variation on the characteristics of nanoscale MOSFET. Our two dimensional (2-D) device simulator is based on nonequilibrium Green´s function (NEGF) formalism. Starting from a basic structure (DG-MOSFET) with a gate length of 10 nm, variation of gate length, channel thickness, gate oxide parameters was carried out in connection with the numerical calculation of device characteristics. In this work quantum transport equations are solved in 2-D by NEGF method in active area of the device to obtain the charge density and Poisson´s equation is solved in entire domain of simulation to get potential profile. Once self-consistently achieved all parameters of interest (e.g. potential profile, charge density, DIBL, etc) can be measured.