Title :
Narrow and broadband low-noise amplifiers at higher frequency using FDSOI CMOS technology
Author :
Mattamana, A. ; Axtell, H. ; Cerny, C. ; Creech, G. ; James, T. ; Mbuko, I. ; Neidhard, R. ; Orlando, P. ; Patel, V.J. ; Selke, D. ; Quach, T.
Author_Institution :
Air Force Res. Lab., Wright-Patterson AFB, OH
Abstract :
This work demonstrates the successful implementation of two single-stage low-noise amplifiers (LNAs) using 0.18 mum fully depleted silicon on insulator (FDSOI) CMOS technology. These two amplifiers utilize a metal T-gate n-MOSFET device for improved RF performance. The narrowband LNA has a measured gain of 8.2 dB, a noise figure (NF) of 1.5 dB and input referred third order intercept point (IIP3) value of 12.8 dBm at 3.2 GHz. The broadband LNA has yielded a gain of 7.6-4.5 dB and a NF of 2.8-3.0 dB across 5-10 GHz. The measured IIP3 is 15.4 dBm at 8 GHz. The narrowband amplifier consumes 28.5 mW and the broadband amplifier consumes 54.5 mW of power, both at Vgs = 0.75 V and Vds = 1.0 V. These two amplifiers have demonstrated the feasibility of FDSOI CMOS technology for phased array applications
Keywords :
CMOS integrated circuits; MMIC amplifiers; MOSFET; low noise amplifiers; silicon-on-insulator; wideband amplifiers; 0.18 micron; 0.75 V; 1 V; 1.5 dB; 2.8 to 3 dB; 28.5 mW; 3.2 GHz; 5 to 10 GHz; 54.5 mW; 7.6 to 4.5 dB; 8.2 dB; FDSOI CMOS technology; broadband low-noise amplifiers; fully depleted silicon on insulator; metal T-gate n-MOSFET device; narrowband low-noise amplifiers; phased array applications; Broadband amplifiers; CMOS technology; Frequency; Gain; Low-noise amplifiers; Narrowband; Noise measurement; Phased arrays; Power amplifiers; Silicon on insulator technology;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587931
