DocumentCode :
317206
Title :
Design consideration of semiconductor optical amplifier linearity
Author :
Chen, J.H. ; Zhao, X. ; Choa, F.S.
Author_Institution :
Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA
Volume :
1
fYear :
1997
fDate :
10-13 Nov 1997
Firstpage :
329
Abstract :
Summary form only given. High linearity semiconductor optical amplifiers (SOAs) are important for 1.3 μm single-channel CATV amplifiers in (WDM) system applications. The amplification nonlinearity or crosstalk between channels are caused by gain nonlinearity generated from the gain compression effect. We have considered important design factors which can affect the gain linearity of an SOA. Device concepts based on current injection profile are proposed and numerically demonstrated to achieve gain and less crosstalk
Keywords :
cable television; infrared sources; laser transitions; nonlinear optics; optical crosstalk; optical design techniques; optical transmitters; semiconductor device models; semiconductor lasers; wavelength division multiplexing; 1.3 mum; WDM system applications; amplification nonlinearity; crosstalk; current injection profile; design factors; device concepts; gain compression; gain linearity; gain nonlinearity; high linearity semiconductor optical amplifiers; less crosstalk; semiconductor optical amplifier linearity; single-channel CATV amplifiers; Computer science; Linearity; Optical amplifiers; Optical crosstalk; Optical design; Optical waveguides; Power amplifiers; Power generation; Semiconductor optical amplifiers; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-3895-2
Type :
conf
DOI :
10.1109/LEOS.1997.630649
Filename :
630649
Link To Document :
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