Title :
Polarization insensitive 1.55 μm optical amplifier with GaAs delta-strained Ga0.47In0.53As quantum wells
Author :
Seiferth, F. ; Johnson, F.G. ; Merritt, Scott A. ; Fox, S. ; Whaley, Ralph D. ; Chen, Y.J. ; Dagenais, Mario ; Stone, D.R.
Abstract :
We report a novel semionductor optical amplifier device design that incorporates delta-strained quantum wells to achieve polarization insensitivity at a wavelength of 1.55 μm. Solid source molecular beam epitaxy (MBE) was used to grow a GaInAsP-InP separate confinement heterostructure (SCH) with six lattice matched GaInAs quantum wells, each containing three thin, highly tensile strained GaAs layers
Keywords :
III-V semiconductors; gallium compounds; indium compounds; infrared sources; light polarisation; molecular beam epitaxial growth; optical fabrication; optical transmitters; quantum well lasers; semiconductor growth; wavelength division multiplexing; 1.55 mum; Ga0.47In0.53As; GaAs delta-strained Ga0.47In0.53As quantum wells; GaInAsP-InP; GaInAsP-InP separate confinement heterostructure; MBE; lattice matched GaInAs quantum wells; polarization insensitive IR optical amplifier; polarization insensitivity; semionductor optical amplifier device design; solid source molecular beam epitaxy; thin highly tensile strained GaAs layers; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Optical amplifiers; Optical design; Optical devices; Optical polarization; Semiconductor optical amplifiers; Solids; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630653
