Title :
RF filters in SiGe BiCMOS technology and fully depleted silicon-on-insulator CMOS technology
Author :
Mbuko, O. ; Orlando, P. ; Axtell, H. ; Cerny, C. ; Creech, G. ; Friddell, T. ; James, T. ; Kormanyos, B. ; Mattamana, A. ; Neidhard, R. ; Nykiel, E. ; Patel, V.J. ; Selke, D. ; Quach, T.
Author_Institution :
Air Force Res. Lab., Wright-Patterson AFB, OH
Abstract :
This paper presents two integrated non-reflective bandpass filters. The filters are implemented in a silicon germanium (SiGe) BiCMOS technology and fully depleted silicon on insulator (FDSOI) CMOS technology. The purpose of these circuits is to explore the feasibility of passive filter applications on silicon substrates while maintaining low insertion loss and 50 Ohm impedance matching. The SiGe-based filter achieved 3.3-4.2 dB insertion loss across 3.5-4.5 GHz with input return loss better than -10 dB from 1-10 GHz. The FDSOI filter simulation yielded an insertion loss of 4.5 dB across the design frequency of 3.7-4.3 GHz
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; band-pass filters; impedance matching; passive filters; radiofrequency filters; silicon-on-insulator; 1 to 10 GHz; 3.3 to 4.2 dB; 4.5 dB; 50 ohm; BiCMOS technology; RF filters; SiGe; fully depleted silicon-on-insulator CMOS technology; impedance matching; insertion loss; integrated nonreflective bandpass filters; passive filter applications; Band pass filters; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Insertion loss; Integrated circuit technology; Passive filters; Radio frequency; Silicon germanium; Silicon on insulator technology;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587933
