Title :
Quantum modeling of nanoscale MOSFET
Author :
Shanbhag, Kaustubh R. ; Subramaniam, P.C.
Author_Institution :
Nat. Inst. qf Technol., Calicut
Abstract :
In this paper, the quantum mechanical issues related to the device functionality have been addressed. Using the Boltzmann transport equation (BTE), the analysis of the device at the quantum ballistic limit is implemented taking into account the effect of quantum mechanical carrier confinement in the transverse direction. The classical threshold voltage of the device is updated with the quantum mechanical correction due to the effect of effective density of states. The mobility of the carriers is modeled with the effect of acoustic phonon and surface roughness scattering mechanisms. The principle of space charge capacitance is used to compute current in the device and compared with experimental data of a bulk MOSFET at 45 nm and 15 nm channel length node technologies.
Keywords :
Boltzmann equation; MOSFET; ballistic transport; carrier mobility; electronic density of states; nanoelectronics; semiconductor device models; space charge; surface phonons; surface roughness; surface scattering; Boltzmann transport equation; acoustic phonon scattering; carriers mobility; effective density of states; nanoscale MOSFET; quantum ballistic limit; quantum mechanical carrier confinement; quantum mechanical correction; quantum modeling; space charge capacitance; surface roughness scattering; Acoustic devices; Acoustic scattering; Boltzmann equation; Carrier confinement; MOSFET circuits; Phonons; Quantum mechanics; Rough surfaces; Surface roughness; Threshold voltage; Effective Density of States; Polysilicon depletion; Surface Charge Capacitance; Threshold Voltage Update;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472495
