Quantum modeling of nanoscale MOSFET

In this paper, the quantum mechanical issues related to the device functionality have been addressed. Using the Boltzmann transport equation (BTE), the analysis of the device at the quantum ballistic limit is implemented taking into account the effect of quantum mechanical carrier confinement in the transverse direction. The classical threshold voltage of the device is updated with the quantum mechanical correction due to the effect of effective density of states. The mobility of the carriers is modeled with the effect of acoustic phonon and surface roughness scattering mechanisms. The principle of space charge capacitance is used to compute current in the device and compared with experimental data of a bulk MOSFET at 45 nm and 15 nm channel length node technologies.