Title :
Porous SiO2 thin films for ULSI applications
Author :
Joshi, Bhavana N. ; Mahajan, A.M.
Author_Institution :
North Maharashtra Univ., Jalgaon
Abstract :
The SiO2 porous dielectric thin films have been sucessfully deposited by spin coating technique using HF as catalyst. The FTIR shows the main stretching Si-O-Si peak at 1074 cm-1 confirms the deposition of SiO2 thin film. The refractive index (RI) and thickness of deposited film measured using ellipsometer is 1.3332 and 2868 A0 respectively. The porosity calculated from the RI is 27.4 % and dielectric constant is determined to be of 3.1. The SEM image confirms the presence of nanopores in the films. These nanopores enhance the film strength and lowers the dielectric constant which improves the suitability of the film to be used as an interlayer dielectrics for ULSI applications.
Keywords :
Fourier transform spectra; ULSI; dielectric thin films; ellipsometry; infrared spectra; nanostructured materials; permittivity; porosity; porous materials; refractive index; scanning electron microscopy; silicon compounds; spin coating; FTIR spectra; SEM image; SiO2; ULSI; dielectric constant; ellipsometer; interlayer dielectrics; nanopores; porosity; porous dielectric thin films; refractive index; spin coating technique; thin film strength; Coatings; Dielectric constant; Dielectric measurements; Dielectric thin films; Hafnium; Nanoporous materials; Optical films; Refractive index; Sputtering; Thickness measurement; HF catalyst; Interlayer dielectrics; Porous SiO2; low dielectric constant; nanopores;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472496
