Porous SiO2 thin films for ULSI applications

Author

Joshi, Bhavana N. ; Mahajan, A.M.

Author_Institution

North Maharashtra Univ., Jalgaon

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

261

Lastpage

263

Abstract

The SiO₂ porous dielectric thin films have been sucessfully deposited by spin coating technique using HF as catalyst. The FTIR shows the main stretching Si-O-Si peak at 1074 cm^-1 confirms the deposition of SiO₂ thin film. The refractive index (RI) and thickness of deposited film measured using ellipsometer is 1.3332 and 2868 A⁰ respectively. The porosity calculated from the RI is 27.4 % and dielectric constant is determined to be of 3.1. The SEM image confirms the presence of nanopores in the films. These nanopores enhance the film strength and lowers the dielectric constant which improves the suitability of the film to be used as an interlayer dielectrics for ULSI applications.

Keywords

Fourier transform spectra; ULSI; dielectric thin films; ellipsometry; infrared spectra; nanostructured materials; permittivity; porosity; porous materials; refractive index; scanning electron microscopy; silicon compounds; spin coating; FTIR spectra; SEM image; SiO₂; ULSI; dielectric constant; ellipsometer; interlayer dielectrics; nanopores; porosity; porous dielectric thin films; refractive index; spin coating technique; thin film strength; Coatings; Dielectric constant; Dielectric measurements; Dielectric thin films; Hafnium; Nanoporous materials; Optical films; Refractive index; Sputtering; Thickness measurement; HF catalyst; Interlayer dielectrics; Porous SiO2; low dielectric constant; nanopores;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472496

Filename

4472496