Title :
Mobile space charge effect in 4H Silicon Carbide IMPATT diodes
Author :
Mukhopadhyay, S. ; Banerjee, Soumen ; Mukhopadhyay, J. ; Banerjee, J.P.
Author_Institution :
Univ. of Calcutta, Kolkata
Abstract :
The effect of mobile space charge in the depletion layer of 4H SiC p+nn+ IMPATT diode has been investigated through computer simulation method. The simulation is based on drift-diffusion model to study DC properties of the device at different bias current densities. The device is designed to operate at millimeter wave frequencies. It is observed that a maximum DC to microwave conversion efficiency of 22.82% is obtained at a bias current density of 4.4times107 A.m2. The DC to microwave conversion efficiency of Read and Quasi Read High-low SDR diodes has also been estimated and compared with that of flat profile p+nn+ diode at the same bias current density of 4.4times107 A.m2.
Keywords :
IMPATT diodes; current density; microwave diodes; millimetre wave diodes; semiconductor device models; silicon compounds; space charge; 4H IMPATT diodes; Quasi Read High-low SDR diodes; Read diodes; SiC; current density; depletion layer; device DC properties; drift-diffusion model; flat profile diode; microwave conversion efficiency; millimeter wave device; mobile space charge effect; Computational modeling; Computer simulation; Current density; Diodes; Microwave devices; Millimeter wave devices; Millimeter wave technology; Mobile computing; Silicon carbide; Space charge; 4H Silicon Carbide; Conversion efficiecy; Drift-diffusion model; Mobile space charge effect;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472497
