Title :
Analytical modeling of threshold voltage for Nanoscale Symmetric Double Gate (SDG) MOSFET with Ultra Thin Body (UTB)
Author :
Vishvakarma, S.K. ; Raj, B. ; Singh, R. ; Panda, C.R. ; Saxena, A.K. ; Dasgupta, S.
Author_Institution :
Indian Inst. of Technol. Roorkee, Roorkee
Abstract :
In this paper an analytical modeling of threshold voltage is carried out for lightly doped nanoscale mid gap symmetrical double gate (SDG) MOSFET based on solution of two dimensional Poission´s Equation in the active area of the device under suitable boundary conditions. The variation of threshold voltage with doping density, channel length, channel thickness and oxide thickness is carried out in this paper. For the purpose of verification, the results have been compared with those obtained from ATLAS.
Keywords :
MOSFET; Poisson equation; electric potential; nanoelectronics; semiconductor device models; semiconductor doping; semiconductor thin films; ATLAS; boundary conditions; channel length; channel thickness; doped nanoscale mid gap symmetrical double gate MOSFET; doping density; oxide thickness; threshold voltage modeling; two dimensional Poisson´s Equation; ultra thin body; Analytical models; Boundary conditions; Doping; MOSFET circuits; Nanoscale devices; Poisson equations; Semiconductor process modeling; Silicon; Temperature; Threshold voltage; ATLAS; Potential; SDG MOSFET; Threshold Voltage;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472499
