Analytical modeling of threshold voltage for Nanoscale Symmetric Double Gate (SDG) MOSFET with Ultra Thin Body (UTB)

Author

Vishvakarma, S.K. ; Raj, B. ; Singh, R. ; Panda, C.R. ; Saxena, A.K. ; Dasgupta, S.

Author_Institution

Indian Inst. of Technol. Roorkee, Roorkee

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

277

Lastpage

280

Abstract

In this paper an analytical modeling of threshold voltage is carried out for lightly doped nanoscale mid gap symmetrical double gate (SDG) MOSFET based on solution of two dimensional Poission´s Equation in the active area of the device under suitable boundary conditions. The variation of threshold voltage with doping density, channel length, channel thickness and oxide thickness is carried out in this paper. For the purpose of verification, the results have been compared with those obtained from ATLAS.

Keywords

MOSFET; Poisson equation; electric potential; nanoelectronics; semiconductor device models; semiconductor doping; semiconductor thin films; ATLAS; boundary conditions; channel length; channel thickness; doped nanoscale mid gap symmetrical double gate MOSFET; doping density; oxide thickness; threshold voltage modeling; two dimensional Poisson´s Equation; ultra thin body; Analytical models; Boundary conditions; Doping; MOSFET circuits; Nanoscale devices; Poisson equations; Semiconductor process modeling; Silicon; Temperature; Threshold voltage; ATLAS; Potential; SDG MOSFET; Threshold Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472499

Filename

4472499