Title :
A 15 GHz CMOS RF switch employing large-signal impedance matching
Author :
Park, Jonghoo ; Ma, Zhenqiang
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin-Madison Univ., Madison, WI
Abstract :
Employing large-signal impedance matching for the transmit node and conjugate matching for the receive node, a 15 GHz CMOS switch with high power handling is designed. With the design techniques, the P-1dB in the transmit mode and the transducer power gain in the receive mode at high frequencies have been significantly improved. The switch exhibits P-1dB of 23.6 dBm and 14.0 dBm, insertion loss of 2.08 dB and 3.67 dB, and isolation of 19.5 dB and 14.4 dB at 15 GHz in the transmit and receive modes, respectively. The results achieved from this design demonstrate that T/R switches with high P-1dB low insertion loss, and high isolation at high frequency that are comparable to III-V counterparts can be realized with CMOS for high level integration
Keywords :
CMOS integrated circuits; MMIC; impedance matching; microwave switches; 15 GHz; 2.08 dB; 3.67 dB; CMOS RF switch; conjugate matching; insertion loss; large-signal impedance matching; receive mode; return loss; transducer power gain; transmit mode; CMOS technology; Capacitance; III-V semiconductor materials; Impedance matching; Insertion loss; Radio frequency; Switches; System-on-a-chip; Transducers; Transmitting antennas;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587939
