A 15 GHz CMOS RF switch employing large-signal impedance matching

Author

Park, Jonghoo ; Ma, Zhenqiang

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin-Madison Univ., Madison, WI

fYear

2006

fDate

18-20 Jan. 2006

Abstract

Employing large-signal impedance matching for the transmit node and conjugate matching for the receive node, a 15 GHz CMOS switch with high power handling is designed. With the design techniques, the P_-1dB in the transmit mode and the transducer power gain in the receive mode at high frequencies have been significantly improved. The switch exhibits P_-1dB of 23.6 dBm and 14.0 dBm, insertion loss of 2.08 dB and 3.67 dB, and isolation of 19.5 dB and 14.4 dB at 15 GHz in the transmit and receive modes, respectively. The results achieved from this design demonstrate that T/R switches with high P_-1dB low insertion loss, and high isolation at high frequency that are comparable to III-V counterparts can be realized with CMOS for high level integration

Keywords

CMOS integrated circuits; MMIC; impedance matching; microwave switches; 15 GHz; 2.08 dB; 3.67 dB; CMOS RF switch; conjugate matching; insertion loss; large-signal impedance matching; receive mode; return loss; transducer power gain; transmit mode; CMOS technology; Capacitance; III-V semiconductor materials; Impedance matching; Insertion loss; Radio frequency; Switches; System-on-a-chip; Transducers; Transmitting antennas;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-9472-0

Type

conf

DOI

10.1109/SMIC.2005.1587939

Filename

1587939