Modeling of floating β ratio of inverter in silicon-on-insulator technology

Silicon-an-insulator (SOI) is now becoming a mainstream technology because of the advantages offered by it over its bulk counterpart. However, the major design constraint related to MOS SOI technology is the floating body effect. Although extensively reported, there are still some consequences of floating body effect. One such outcome of floating body effect is the variable beta ratio. The variable beta ratio affects the switching behavior and hence the noise margins. In this paper we report the modeling of variable beta ratio, as a function of floating body effects Viz, kink and parasitic bipolar junction transistor (BJT). This model will be verified on a 2D device simulator.