Title :
Design of distributed amplifiers and oscillators in 130 nm SOI MOS technology
Author :
Moussa, M. Si ; Pavageau, C. ; Picheta, L. ; Danneville, F. ; Russat, J. ; Fel, N. ; Raskin, J.-P. ; Vanhoenacker-Janvier, D.
Author_Institution :
Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
In this paper, the design and the results of two CMOS silicon-on-insulator (SOI) distributed amplifiers (DA) are presented. Partially-depleted SOI process using microstrip lines, and floating-body (FB) transistors are considered. The measured gain is around 4.5 dB with a 0.4-30 GHz bandwidth for the common source DA (CSDA) and around 7 dB with a 0.4-26 GHz bandwidth for the cascode DA (CDA). The optimized performances were found for 1.4 V supply voltage, which corresponds to a DC power consumption of 66 and 55 mW for the CSDA and the CDA, respectively. The CSDA circuit has been extended to design a distributed oscillator (DO) at 12 GHz, and CDA to a cascaded CDA with a cut-off frequency of 48 GHz and 8 dB gain.
Keywords :
CMOS integrated circuits; MMIC amplifiers; MMIC oscillators; distributed amplifiers; integrated circuit design; microstrip lines; silicon-on-insulator; 0.4 to 30 GHz; 1.4 V; 12 GHz; 130 nm; 48 GHz; 55 mW; 66 mW; 8 dB; CMOS silicon-on-insulator distributed amplifiers; SOI MOS technology; cascode distributed amplifier; common source distributed amplifier; distributed oscillators; floating-body transistors; microstrip lines; partially-depleted SOI process; Bandwidth; CMOS technology; Circuits; Distributed amplifiers; Energy consumption; Gain measurement; Microstrip components; Oscillators; Silicon on insulator technology; Voltage;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587940
