Title :
Reactor to feature scale simulation studies of SiO2 etching in C2F6 plasma for microfabrication
Author :
Rajesh, A.K.P. ; Dimri, A.K.
Author_Institution :
Central Sci. Instrum. Organ., Chandigarh
Abstract :
In this study, a numerical simulator has been developed for an inductively coupled plasma (ICP) etcher for SiO2 etching with C2F6 plasma using a commercial CFD code called ESI-CFD. To develop the simulator, we judiciously tuned the associated simulation modules in CFD-ACE+/TOPO by selecting appropriate reaction sets and adjusting kinetic parameters for the gas phase as well as surface reactions. Using the simulator, the effects of operating variables including RF power, bias voltage, and chamber pressure on the profile evolution were investigated. The energy and angular dependence of the incoming species flux have been computed after reactor scale simulation is coupled to feature scale simulation module (CFD-TOPO).
Keywords :
computational fluid dynamics; etching; microassembling; plasma materials processing; semiconductor process modelling; silicon compounds; CFD-TOPO; ESI-CFD; RF power; SiO2; bias voltage; chamber pressure; commercial CFD code; feature scale simulation; inductively coupled plasma etcher; microfabrication; numerical simulator; operating variables; profile evolution; reactor scale simulation; Computational fluid dynamics; Computational modeling; Etching; Inductors; Kinetic theory; Numerical simulation; Plasma applications; Plasma simulation; Radio frequency; Voltage; Inductively coupled plasma; ion flux; plasma etching; profile evolution; radical; simulation;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472502
