DocumentCode :
3172315
Title :
MMIC technology at Gallium Arsenide Enabling Technology Centre
Author :
Muralidharan, R.
Author_Institution :
Gallium Arsenide Technol. Enabling Centre (GAETEC), Hyderabad
fYear :
2007
fDate :
16-20 Dec. 2007
Firstpage :
303
Lastpage :
306
Abstract :
An overview of the activities at Gallium Arsenide Enabling TEchnology Centre (GAETEC) at Hyderabad, India is being presented here. GAETEC is a vertically integrated foundry with design, fabrication, assembly, testing, packaging and module-making facilities. The technologies available for production would be described in detail, and mention would be made of those being implemented. Examples of products developed and delivered, and those under development would also be given.
Keywords :
MMIC; Schottky gate field effect transistors; gallium arsenide; high electron mobility transistors; integrated circuit manufacture; GAETEC; Gallium Arsenide Enabling Technology Centre; Hyderabad; India; MESFET; MMIC technology; metal semiconductor field effect transistors; monolithic microwave integrated circuits; pseudomorphic HEMT; pseudomorphic high electron mobility transistors; vertically integrated foundry; Circuit testing; Etching; Gallium arsenide; Gold; MESFETs; MMICs; PHEMTs; Polyimides; Resistors; Switches; MESFET; MMIC; pseudomorphic HEMT;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
Type :
conf
DOI :
10.1109/IWPSD.2007.4472504
Filename :
4472504
Link To Document :
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