Title :
InAlN - A new barrier material for GaN-based HEMTs
Author :
Kohn, Erhard ; Medjdoub, Farid
Author_Institution :
Univ. of Ulm, Ulm
Abstract :
The InAlN/GaN heterojunction is a new alternative to the common AlGaN/GaN configuration with high sheet charge density and high thermal stability, promising very high power and temperature performance as well as robustness. The status, focussing on the lattice matched materials configuration is reviewed.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; thermal stability; wide band gap semiconductors; HEMT; InAlN-GaN; barrier material; lattice matched materials configuration; sheet charge density; thermal stability; Aluminum gallium nitride; Gallium nitride; HEMTs; Heterojunctions; Lattices; MODFETs; Robust stability; Sheet materials; Temperature; Thermal stability; High temperature electronics; III-nitrides; InAlN/GaN heterostructure; high power devices;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472506
